microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2003 rev. 1.0 www. microsemi . com LX3051 3.125 gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products description microsemi?s ingaas/inp pin photo diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. the device series offer high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. the LX3051 3gbps coplanar wave- guide photodiode is currently offered in die form allowing manufacturers the versatility of custom assembly confi- gurations including traditional wirebond or flip chip assembly this device is ideal for manufacturers of optical receivers, transceivers, tran sponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? LX3051 single die ? coplanar waveguide , 50 ohm ? high responsivity ? low dark current ? high bandwidth ? anode/cathode on illuminated side ? 125 m pad pitch ? die good for wire bond or flip-chip ? die good for non-hermetic package applications ? 1310nm catv optical applications ? sonet/sdh oc-48, atm ? 2.5gb/s or 3.125gb/s ethernet (8b/10b) fibre channel ? 1310nm vcsel receivers ? optical backplane benefits ? large wirebond contact pads ? low contact resistance ? wire bond or flip chip applications ? ground- signal-ground pad configuration for standard rf test probes product highlight ? coplanar design (gnd-signal-gnd) 50 ohm characteristic impedance ? 125 um standard pad pitch for ease of test ? large 75um x 75um pad size for ease of packaging ? wire bond or flip chip capability l l x x 3 3 0 0 5 5 1 1
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2003 rev. 1.0 www. microsemi . com LX3051 3.125 gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products characteristics test conditions (unle ss otherwise noted): t a = 25 o c, v r = 5 volts LX3051 parameter symbol test conditions min typ max units ` maximum ratings operating junction temperature range t j -20 +85 c storage temperature range t stg -55 +125 c maximum soldering temperature 10 sec onds maximum at temperature +260 c ` electrical characteristics active area diameter 80 m v r = 5v, ? = 1550nm 0.9 1.1 responsivity (1) r v r = 5v, = 1310nm 0.85 1.0 a/w dark current i d v r = 5v 0.4 10 na breakdown voltage bv r i r = 10 ? a 30 44 volts capacitance c v r = 5v 0.43 0.5 pf bandwidth (2) bw v r = 5v, = 1550nm @-3db 4.5 5.8 ghz note 1. antireflective coating is ? wavelengt h at 1430nm covering 1310 and 1550nm applications 2. bandwidth is measured at ?3db electrical power (pho tocurrent drops to 71% of dc value) into a 50 ohm load die geometry part number active area a, m die dimension, m pad dimension, m p ad pitch, p, m die thickness, m y x w v LX3051 80 450 450 75 75 125 152 e e l l e e c c t t r r i i c c a a l l s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2003 rev. 1.0 www. microsemi . com LX3051 3.125 gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products characteristic curves LX3051 bv over temperature 40 41 42 43 44 45 46 47 48 -40 -20 0 20 40 60 80 100 120 temp ( c) bv (v) min bv (v) mean bv (v) max bv (v) id @ vr=5.00v 0.100 1.000 10.000 100.000 1000.000 0 20 40 60 80 100 120 temp id@5v (na) ma x avg min LX3051 bw (vr = 1 to 5v, 1550nm) -5 -4 -3 -2 -1 0 0.e+00 1.e+09 2.e+09 3.e+09 4.e+09 5.e+09 6.e+09 frequency (hz) relative s21(db) vr=-5v, bw=6.43ghz vr=-4v, bw=5.95ghz vr=-3v, bw=5.56ghz vr=-2v, bw=4.41ghz vr=-1v, bw=3.83ghz LX3051 cv 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 012345678910 v c (pf) c@85oc (pf) c@25oc (pf) g g r r a a p p h h s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2003 rev. 1.0 www. microsemi . com LX3051 3.125 gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products circuit model r diode c diode c shunt r ser l ser part # rser (ohm) lser (nh) cshunt (pf) cdiode (pf) rdiode (mohm) LX3051 12 0.05 0.035 0.40 25 precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling ingaas pin photo diode. c c i i r r c c u u i i t t m m o o d d e e l l
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